Datasheet > CM2326

CM2326

更新时间： 2024-09-25 17:15:31

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1245K
描述
SOT-23

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CM2326 数据手册

CM2326

N-Channel 100V (D-S) Power MOSFET

Description

Applications

CM2326 is the N-Channel enhancement mode power field

effect transistors with high cell density, trench technology.

This high density process and design have been optimized

switching performance and especially tailored to minimize

on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 100V

Marking Code = 5C

Date Code = XX

ID: 2.6A

5CXX

RDS_ON(@VGS=10V) : < 140mΩ

RDS_ON(@VGS=4.5V) : < 300mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

SOT-23 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CM2326

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

100

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TA=25°C

TA=70°C

2.6

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

2.1

IDM

EAS

10.4

Single Pulse Avalanche Energy⁽³⁾

1.25

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

1.4

RθJA

TJ,TSTG

°C/W

°C

-55 to +150

Sep. 2021, Rev. 1.1

1 of 5

www.appliedpowermicro.com

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