Datasheet > CM2312

CM2312

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1268K
描述
SOT-23

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CM2312 数据手册

CM2312

N-Channel 20V (D-S) Power MOSFET

Description

Applications

CM2312 is the N-Channel enhancement mode power field

effect transistors with high cell density, trench technology.

This high density process and design have been optimized

switching performance and especially tailored to minimize

on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 20V

Device Code = A9

Date Code=XX

ID: 7.2A

A9XX



RDS_ON(@VGS=4.5V) : < 18mΩ

RDS_ON(@VGS=2.5V) : < 22mΩ

RDS_ON(@VGS=1.8V) : < 39mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SOT-23 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CM2312

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

±10

VGS

TA=25°C

TA=70°C

7.2

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

5.8

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

1.4

RθJA

°C/W

°C

TJ,TSTG

-55 to +150

Sep. 2020, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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