CM2301B
P-Channel 20V (D-S) Power MOSFET
Description
Applications
CM2301B is the P-Channel enhancement mode power
field effect transistors with high cell density, trench tech-
nology. This high density process and design have been
optimized switching performance and especially tailored to
minimize on-state resistance.
Cellular Handsets and Accessories
Personal Digital Assistants
Portable Instrumentation
Load switch
Marking Information
Features
VDS: -20V
Device Code = 8B
Date Code = XX
ID: -2.0A
8BXX
RDSON (@VGS=-4.5V) : < 120mΩ
RDSON (@VGS=-2.5V) : < 150mΩ
RDSON (@VGS=-1.8V) : < 250mΩ
High density cell design for extremely low RDSON
Excellent on-resistance and DC current capability
Ordering Information
Equivalent Circuit and Pin Configuration
SOT-23 (Top View)
Part Number
Packaging
3000/Tape & Reel
Reel Size
CM2301B
7 inch
Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)
Parameter
Symbol
VDS
Maximum
-20
Unit
V
Drain-source Voltage
Gate-source Voltage
VGS
±10
V
TA=25°C
TA=70°C
-2.0
A
Continuous Drain Current
Pulsed Drain Current(1)
ID
-1.6
A
IDM
PD
-8
A
Total Power Dissipation @ TA=25°C (2)
Thermal Resistance Junction-to-Ambient (2)
Junction and Storage Temperature Range
0.7
W
RθJA
178
°C/W
°C
TJ,TSTG
-55 to +150
Aug. 2020, Rev. 1.0
1 of 5
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