Datasheet > 晶体管 > IGBT> CM200TU-5F

CM200TU-5F

更新时间： 2024-11-20 22:48:51

品牌	Logo	应用领域
POWEREX		晶体晶体管电动机控制双极性晶体管栅局域网
页数	文件大小	规格书
4页	75K
描述
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts

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数据手册

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CM200TU-5F 数据手册

CM200TU-5F

Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Trench Gate Design

Six IGBTMOD™

200 Amperes/250 Volts

R 4 - Mounting

Holes

GuP

EuP

GvP

EvP

GwP

EwP

Measured

Point

GwN

EwN

GuN

EuN

GvN

EvN

Measured

Point

Description:

Powerex IGBTMOD™ Modules

are designed for use in switching

applications. Each module consists

of six IGBT Transistors in a three

phase bridge configuration, with

each transistor having a reverse-

connected super-fast recovery

free-wheel diode. All components

and interconnects are isolated

from the heat sinking baseplate,

offering simplified system assembly

and thermal management.

5 - M5 NUTS

0.110 - 0.5 Tab

Features:

□ Low Drive Power

GuP

GvP

GwP

□ Low V

CE(sat)

EuP

EvP

EwP

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control

□ UPS

GuN

GvN

EvN

GwN

EwN

EuN

□ Battery Powered Supplies

Outline Drawing and Circuit Diagram

Ordering Information:

Example: Select the complete

module number you desire from

the table - i.e. CM200TU-5F is a

Dimensions

Inches

4.21

Millimeters

107.0

Dimensions

Inches

0.15

Millimeters

3.75

17.0

3.54±0.01

4.02

90.0±0.25

102.0

0.67

250V (V

), 200 Ampere Six-

CES

1.91

48.5

0.8

IGBT IGBTMOD™ Power Module.

3.15±0.01

0.43

80.0±0.25

11.0

0.03

Current Rating

Amperes

CES

Volts (x 50)

0.32

8.1

Type

0.91

23.0

1.02

26.0

5.5 Dia.

14.4

200

0.47

12.0

0.22 Dia.

0.57

0.85

21.7

0.91

23.0

12 3 4

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