Datasheet > CM180N10AGB

CM180N10AGB

更新时间： 2024-10-31 17:15:51

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1190K
描述
TO-263

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CM180N10AGB 数据手册

CM180N10AGB

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CM180N10AGB is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features

Marking Code = 180N10AGB

Date Code = XXXX



V_DS: 100V

I_D(@V_GS=10V): 228A

180N10AGB

RDS_ON(@V_GS=10V) : < 2.6mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

TO-263

P/N

Package Type Packaging

CM180N10AGB

TO-263

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

100

±20

228

120

146

480

311

Tc=25°C(Silicon Limit)

Continuous Drain Current ⁽¹⁾Tc=25°C(Package Limit)

Tc=100°C (Silicon Limit)

Pulsed Drain Current⁽²⁾

IDM

PD @ Tc=25°C

Total Power Dissipation ⁽³⁾

Derating Factor

above 25°C

2.5

W/°C

Thermal Resistance Junction-to-Case ⁽³⁾

RθJC

0.402

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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