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CM1600HB-34H PDF预览

CM1600HB-34H

更新时间: 2024-11-18 21:19:39
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网功率控制晶体管
页数 文件大小 规格书
2页 33K
描述
Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

CM1600HB-34H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:unknown风险等级:5.92
外壳连接:ISOLATED最大集电极电流 (IC):1600 A
集电极-发射极最大电压:1700 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
元件数量:2端子数量:7
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):14700 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICONBase Number Matches:1

CM1600HB-34H 数据手册

 浏览型号CM1600HB-34H的Datasheet PDF文件第2页 
MITSUBISHI HVIGBT MODULES  
CM1600HB-34H  
HIGH POWER SWITCHING USE  
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM1600HB-34H  
IC................................................................ 1600A  
VCES ....................................................... 1700V  
Insulated Type  
1-element in a pack  
APPLICATION  
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130  
114  
4 - M8 NUTS  
57±0.25  
57±0.25  
C
C
C
C
C
G
E
CM  
E
E
E
E
E
CIRCUIT DIAGRAM  
G
C
16.5  
3 - M4 NUTS  
6 - φ 7 MOUNTING HOLES  
2.5  
5
18.5  
61.5  
35  
11  
18  
14.5  
LABEL  
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)  
Mar. 2003  

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