Datasheet > CM1201

CM1201

更新时间： 2024-09-28 17:15:19

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1235K
描述
DFN1.2*1.2-3L

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CM1201 数据手册

CM1201

P-Channel 20V (D-S) Power MOSFET

Description

Applications

CM1201 is the P-Channel enhancement mode power field

effect transistors with high cell density, trench technology.

This high density process and design have been optimized

switching performance and especially tailored to minimize

on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: -20V

ID: -0.5A

Device Code = 2J

Data Code =X

RDS_ON(@VGS=-4.5V) : < 850mΩ

RDS_ON(@VGS=-2.5V) : < 1200mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

2JX

Ordering Information

Equivalent Circuit and Pin Configuration

DFN1.2*1.2-3L

Part Number

Packaging

Reel Size

CM1201

5000/Tape & Reel

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-20

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±10

-0.5

TA=25°C ,Steady State

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

TA=75°C ,Steady State

-0.3

-2

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

@Steady State

342

°C/W

°C

Thermal Resistance Junction-to-Ambient ⁽²⁾@Steady State

RθJA

366

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Aug. 2022, Rev. 0.0

1 of 5

www.appliedpowermicro.com

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