Datasheet > CM1200HG-66H_09

CM1200HG-66H_09

更新时间： 2024-02-13 04:44:17

品牌	Logo	应用领域
三菱 - MITSUBISHI		开关双极性晶体管高功率电源
页数	文件大小	规格书
7页	97K
描述
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200HG-66H_09 数据手册

MITSUBISHI HVIGBT MODULES

CM1200HG-66H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HG-66H

● IC............................................................... 1200 A

● VCES ...................................................... 3300 V

● High Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

190 0.5

5-M8 NUTS

57 0.25

(6)

(4)

(2)

(5)

(3)

(1)

CIRCUIT DIAGRAM

3-M4 NUTS

8-φ7 MOUNTING HOLES

14 0.3

59.2 0.5

61.2 0.5

12 0.3

18 0.3

41 0.5

screwing depth

min. 16.5

22 0.3

screwing depth

min. 7.7

LABEL

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

12 3 4 5 6 7

中文翻译

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