Datasheet > CM03N50HU

CM03N50HU

更新时间： 2024-09-22 17:15:23

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1391K
描述
TO-252

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CM03N50HU 数据手册

CM03N50HU

N-Channel 500V (D-S) Power MOSFET

Description

Applications

The CM03N50HU is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features



VDS: 500V

Marking Code = 03N50HU

Date Code = XXXX

ID (@VGS=10V): 3A

03N50HU

XXXX

RDS_ON(@VGS=10V) : < 2.9Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

Remark

TO-252

CM03N50HU

TO-252

Tape and reel

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

500

Gate-source Voltage

±30

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

0.7

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.6

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Jun. 2023, Rev. 1.0

1 of 5

www.chipcore.com

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