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CLVC3G07QDCURG4Q1 PDF预览

CLVC3G07QDCURG4Q1

更新时间: 2024-11-18 12:50:43
品牌 Logo 应用领域
德州仪器 - TI 驱动器栅极触发器逻辑集成电路光电二极管输出元件
页数 文件大小 规格书
9页 270K
描述
TRIPLE BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS

CLVC3G07QDCURG4Q1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:VSSOP-8针数:8
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:6 weeks风险等级:5.74
Is Samacsys:N系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:2.3 mm负载电容(CL):50 pF
逻辑集成电路类型:BUFFER最大I(ol):0.032 A
湿度敏感等级:1功能数量:3
输入次数:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装等效代码:TSSOP8,.12,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:3.3 V最大电源电流(ICC):0.01 mA
Prop。Delay @ Nom-Sup:3.7 ns传播延迟(tpd):7.8 ns
认证状态:Not Qualified施密特触发器:NO
筛选级别:AEC-Q100座面最大高度:0.9 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2 mmBase Number Matches:1

CLVC3G07QDCURG4Q1 数据手册

 浏览型号CLVC3G07QDCURG4Q1的Datasheet PDF文件第2页浏览型号CLVC3G07QDCURG4Q1的Datasheet PDF文件第3页浏览型号CLVC3G07QDCURG4Q1的Datasheet PDF文件第4页浏览型号CLVC3G07QDCURG4Q1的Datasheet PDF文件第5页浏览型号CLVC3G07QDCURG4Q1的Datasheet PDF文件第6页浏览型号CLVC3G07QDCURG4Q1的Datasheet PDF文件第7页 
SN74LVC3G07-Q1  
www.ti.com .................................................................................................................................................... SCES616BOCTOBER 2004REVISED APRIL 2008  
TRIPLE BUFFER/DRIVER  
WITH OPEN-DRAIN OUTPUTS  
1
FEATURES  
Qualified for Automotive Applications  
Typical VOHV (Output VOH Undershoot) >2 V at  
VCC = 3.3 V, TA = 25°C  
Supports 5-V VCC Operation  
Ioff Supports Partial-Power-Down Mode  
Operation  
Max tpd of 3.7 ns at 3.3 V  
Low Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Input and Open-Drain Output Accepts  
Voltages up to 5.5 V  
ESD Protection Exceeds JESD 22  
2000-V Human-Body Model (A114-A)  
200-V Machine Model (A115-A)  
Typical VOLP (Output Ground Bounce) <0.8 V at  
VCC = 3.3 V, TA = 25°C  
1000-V Charged-Device Model (C101)  
DCU PACKAGE  
(TOP VIEW)  
VCC  
1
2
3
4
8
7
6
5
1A  
3Y  
1Y  
3A  
2Y  
2A  
GND  
See mechanical drawing for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
This triple buffer/driver is designed for 1.65-V to 5.5-V VCC operation.  
The output of the SN74LVC3G07 is open drain and can be connected to other open-drain outputs to implement  
active-low wired-OR or active-high wired-AND functions. The maximum sink current is 32 mA.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING(3)  
–40°C to 125°C  
VSSOP – DCU  
Reel of 3000  
SN74LVC3G07QDCURQ1  
C07_  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
(3) DCU: The actual top-side marking has one additional character that designates the wafer fab/assembly site.  
FUNCTION TABLE  
(EACH BUFFER/DRIVER)  
INPUT  
A
OUTPUT  
Y
H
L
H
L
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2004–2008, Texas Instruments Incorporated  

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