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CLE336

更新时间: 2024-11-24 06:47:59
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描述
850nm Super-Efficient AlGaAs Emitter Narrow Radiation Pattern

CLE336 数据手册

  
®
CLE336  
Clairex  
Technologies, Inc.  
850nm Super-Efficient AlGaAs Emitter  
Narrow Radiation Pattern  
April, 2006  
0.100 (2.54) dia.  
0.215 (5.46)  
0.156 (3.96)  
0.136 (3.45)  
1.00 (25.4) min.  
0.165 (4.19)  
0.145 (3.68)  
0.205 (5.21)  
CATHODE  
(connected  
to case)  
0.190 (4.83)  
0.176 (4.47)  
ANODE  
0.025 (0.64) max.  
0.147 (3.73)  
0.137 (3.48)  
0.019 (0.48)  
0.016 (0.41)  
0.050 (1.27) nom  
Case 7  
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)  
absolute maximum ratings (TA = 25°C unless otherwise stated)  
features  
storage temperature.......................................................................-65°C to +150°C  
operating temperature....................................................................-65°C to +150°C  
lead soldering temperature(1).......................................................................... 260°C  
continuous forward current(2).........................................................................100mA  
peak forward current (1.0ms pulse width, 10% duty cycle) ..................................1A  
reverse voltage.....................................................................................................5V  
continuous power dissipation(3) ....................................................................200mW  
150°C operating temperature  
± 4.5° beam angle  
exceptionally high power output  
845nm wavelength  
TO-46 hermetic package  
cathode connected to case  
RoHS compliant  
notes:  
description  
1. 0.06” (1.5mm) from the header for 5 seconds maximum.  
2. Derate linearly 0.64mA/°C free air temperature to TA = +150°C.  
3. Derate linearly 1.28mW/°C free air temperature to TA = +150°C.  
The CLE336 is an advanced, high-  
efficiency, high speed AlGaAs  
infrared emitting diode. Output  
power exceeds standard AlGaAs  
emitters by 50%. A special lens  
provides a sharply focused beam  
pattern. The CLE336 is designed  
for use anywhere a narrow beam  
pattern and very high output are  
required.  
electrical characteristics (TA = 25°C unless otherwise noted)  
symbol parameter  
min  
typ  
max  
units  
test conditions  
PO  
Ee  
VF  
IR  
Total power output  
10  
-
-
-
-
-
-
-
-
20  
3.5  
1.7  
-
845  
40  
9.0  
11  
7.0  
-
mW  
IF = 100mA  
Irradiance(4)  
-
1.9  
10  
-
-
-
mW/cm2 IF = 100mA  
Forward voltage  
Reverse current  
Peak emission wavelength  
Spectral bandwidth at half power points  
Emission angle at half power points  
Radiation rise time  
V
µA  
nm  
nm  
deg.  
ns  
IF = 100mA  
VR = 5V  
IF = 100mA  
IF = 100mA  
IF = 100mA  
λ
P
BW  
θ
HP  
tr  
Tf  
-
-
IF = 100mA, f = 1KHz, Duty  
Cycle = 50%  
Radiation fall time  
ns  
Note: 4. Ee is a measure of irradiance (power/unit area) within a 0.444" (1.128cm) diameter area, centered on the mechanical axis  
of the device and spaced 2.54" (6.45cm) from the lens side of the tab. This is geometrically equivalent to a 10° cone.  
Revised 11/08/06  
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.  
Clairex Technologies, Inc.  
Phone: 972-265-4900  
1301 East Plano Parkway  
Fax: 972-265-4949  
Plano, Texas 75074-8524  
www.clairex.com  

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