Datasheet > CLD667A

CLD667A

更新时间： 2024-10-02 01:19:59

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描述
NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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中文翻译

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数据手册

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CLD667A 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CLD667, CLD667A

TO-92

Plastic Package

Low Frequency Power Amplifier

Complementary CLB647/CLB647A

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)

CLD667A

UNITS

DESCRIPTION

SYMBOL

CLD667

V_CBO

120

Collector Base Voltage

120

V_CEO

V_EBO

I_C

100

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

5.0

1.0

2.0

0.9

150

I_CP

P_C

T_j

Collector Current Peak

Collector Power Dissipation

Junction Temperature

Storage Temperature

ºC

T_stg

- 55 to +150

ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)

CLD667

>120

DESCRIPTION

SYMBOL

V_CBO

TEST CONDITION

I_C=10mA, I_E=0

CLD667A

>120

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut Off Current

V_CEO

I_C=1mA, I_B=0

>80

>100

V_EBO

>5.0

I_E=10mA, I_C=0

>5.0

I_CBO

V_CB=100V, I_E= 0

**V_CE=5V, I_C=150mA

**V_CE=5V, I_C=500mA

**I_C=500mA, I_B=50mA

**V_CE=5V, I_C=150mA

<10

*h_FE

60 - 320

>30

60 - 200

>30

DC Current Gain

V_{CE (sat)}

V_{BE (on)}

f_T

<1.0

Collector Emitter Saturation Voltage

Base Emitter on Voltage

<1.0

<1.5

**V_CE=5V, I_C=150mA

Typ 140

Typ 12

Transition Frequency

Typ 140

Typ 12

MHz

C_Ob

V_CB=10V, I_E=0, f=1MHz

Collector Output Capacitance

*h_FEClassifications

CLD667

B : 60 - 120

C : 100 - 200

D : 160 - 320

CLD667A

**Pulse Test

CLD667_667A Rev111209E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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