CL2102D-L

更新时间： 2024-09-28 06:47:59

品牌	Logo	应用领域
RFHIC		二极管
页数	文件大小	规格书
5页	420K
描述
Limiter-diode LNA

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中文翻译

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数据手册

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CL2102D-L 数据手册

Limiter-diode LNA

CL2102D-L

Product Features

Application

• GaAs p-HEMT chip on board

• Limiter–diode insertion

• WiMAX, WiBro, LTE

• PCS, DCS, W-CDMA, WLAN

• Repeater

• Base Station

• RF Sub-Systems

• High Maximum Input Power(+30dBm)

• No matching circuit needed

• Single Supply Voltage (+5V)

• Surface Mount Hybrid Type

• Tape & Reel Packaging

• Small Size, High Heatsink

• Alumina Substrate

Package : CP-16A

• Pb Free / RoHS Standard

Description

• This LNA family is a high gain, ultra low noise amplifier.

• This family of Low Noise Amplifier has superior performance comes with a modest price tag.

Electrical Specifications

Parameter

Frequency Range

Units

MHz

Minimum

Typical

Maximum

1750

2600

Small Signal Gain(S₂₁)

Gain Flatness

14.5

± 2.0

-20

-10

Input Return Loss (S₁₁)

Output Return Loss (S₂₂)

1dB Compression Point (P₁dB)

dBm

Output 3^rdOrder Intercept Point

(OIP3) (TYP.)

Noise Figure (TYP.)

0.7

1.0

RF Input Power (for 12 hours)

DC Supply Current (Vdc=+5V)

dBm

100

120

Test Condition

① Fc=2100MHz, Supply Voltage = +5V, 50ohm system, Ta = 25℃

② OIP3 is measured with two tones, at an output power of + 0dBm/tone separated by 1MHz.

▪ Tel : 82-31-250-5011

▪ rfsales@rfhic.com

1/5

▪ All specifications may change without notice.

▪ Version 1.3

12 3 4 5

中文翻译

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