Datasheet > CK100

CK100

更新时间： 2024-10-29 23:42:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	48K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| TO-39

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中文翻译

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数据手册

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CK100 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR TRANSISTORS

CL 100, A, B

CK 100, A, B

TO-39

Metal Can Package

CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range

Of Medium Voltage And Current Amplifier Applications.

Complementary CK100, A, B

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

V_CER

Collector -Emitter Voltage

Collector -Base Voltage

Emitter Base Voltage

Collector Current-Continuous

V_CBO

V_EBO

I_CM

P_D

Power Dissipation @ Ta=25ºC

Derate above 25ºC

800

5.33

mW /°C

P_D

Total device dissipation @ Tc=25ºC

Derate above 25ºC

mW /°C

°C

T_j, T_stg

Operating And Storage Junction

Temperature Range

-55 to +175

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

TYP

DESCRIPTION

SYMBOL TEST CONDITION

BV_CER* I_C=10mA, I_B=0

MIN

MAX

UNIT

Collector Emitter Breakdown Voltage

Collector Base Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Leakage Current

Emitter Leakage Current

BV_CBO

BV_EBOI_E=100µA, I_C=0

I_C=100µA, I_E=0

I_CBO

I_EBO

h_FE

V_CB=40V, I_E=0

V_EB=4V, I_E=0

µA

I_C=150mA,V_CE=10V

DC Current Gain

300

0.9

0.6

V_BE(on)* V_CE=1V, I_C=150mA,

V_CE(sat)* I_C=150mA,I_B=15mA

Base Emitter On Voltage

Collector Emitter (Sat) Voltage

CLASSIFICATION

HFE

40-120

100-300

*Pulse Condition : PW <300us, Duty Cycle < 2%

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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