Datasheet > CJU40SN06

CJU40SN06

更新时间： 2023-12-06 20:04:00

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2382K
描述
TO-252-2L

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数据手册

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CJU40SN06 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU40SN06 N-Channel Power MOSFET

TO-252-2L

I_D

V_(BR)DSS

R_DS(on)TYP

@10V

11mΩ

60V

40 A

14mΩ 4.5V

1. GATE

2. DRAIN

3. SOURCE

DESCRIPTION

The CJU40SN06 uses shielded gate trench technology and

design to provide excellent R_DS(ON)with low gate charge. It can

be used in a wide variety of applications

FEATURE

APPLICATION



Power switching application



Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

U40SN06= Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX=Code

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

V_GS

±20

Continuous Drain Current

Pulsed Drain Current

I_D

I_DM

160

190

1.25

100

150

(1)

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

P_D

R_θJA

T_J

Thermal Resistance from Junction to Ambient

Junction Temperature

℃/W

℃

Storage Temperature Range

T_stg

T_L

-55 ~+150

260

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)

(1).E_AScondition: V_DD=30V,VGS=10V, L=0.5mH, R_G=25Ω, Starting T_J= 25°C

(2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

Rev. - 1.2

www.jscj-elec.com

12 3 4 5

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