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CJU40P04A PDF预览

CJU40P04A

更新时间: 2023-12-06 20:09:11
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
6页 5168K
描述
TO-252-2L

CJU40P04A 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-252-2L Plastic-Encapsulate MOSFETS  
CJU40P04A  
V(BR)DSS  
P-Channel Power MOSFET  
RDS(on)TYP  
10.5mΩ@10V  
14mΩ@4.5V  
ID  
TO-252-2L  
-40V  
-40A  
GENERAL DESCRIPTION  
2
The CJU40P04A uses advanced trench technology and design to provide  
1. GATE  
2. DRAIN  
3. SOURCE  
1
3
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.  
FEATURE  
APPLICATION  
Advanced trench process technology  
Reliable and rugged  
Power management in notebook computer  
Portable equipment and battery powered systems  
High density cell design for ultra low On-Resistance  
EQUIVALENT CIRCUIT  
MARKING  
U40P04A = Device code.  
Solid dot = Green molding compound device,  
if none, the normal device.  
XXXX = Code.  
U40P04A  
XXXX  
MAXIMUM RATINGS ( Ta=25unless otherwise noted )  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Limit  
-40  
Unit  
V
Gate-Source Voltage  
VGS  
±20  
-40  
V
Continuous Drain Current  
ID  
A
Pulsed Drain Current  
IDM  
-160  
240  
A
Single Pulsed Avalanche Energy  
Power Dissipation  
EAS  
mJ  
W
PD  
74  
Thermal Resistance from Junction to Ambient  
Thermal Resistance from Junction to Case  
RθJA  
100  
/W  
/W  
RθJC  
1.67  
-55~+150  
T ,  
J
Operating Junction and  
Tstg  
Storage Temperature Range  
www.jscj-elec.com  
1
Rev. - 2.1  

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