Datasheet > CJU40P04

CJU40P04

更新时间： 2023-12-06 20:11:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2619K
描述
TO-252-2L

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CJU40P04 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU40P04 P-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

-40A

-40V

11mΩ

-10V

TO-252-2L

DESCRIPTION

The CJU40P04 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. This device is well

1. GATE

2. DRAIN

3. SOURCE

suited for high current load applications.

FEATURES

High density cell design for ultra low R_DS(ON)

Fully characterized Avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Uninterruptible Power Supply

APPLICATIONS

Power switching application

Hard switched and high frequency circuits

MARKING

EQUIVALENT CIRCUIT

U40P04 = Device code.

Solid dot = Green molding compound

device if none, the normal device.

XXXX = Code.

U40P04

XXXX

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Value

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_GS

±20

①

I_D

-40

②

I_DM

-160

③

Single Pulsed Avalanche Energy

Maximum Power Dissipation

544

E_AS

①

P_D

⑥

R_θJA

℃/W

Thermal Resistance from Junction to Ambient

100

①

R_θJC

℃/W

Thermal Resistance from Junction to Case

1.56

℃

Operating Junction and

Storage Temperature Range

T ,

-55~+150

T_stg

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

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