Datasheet > CJP12N65

CJP12N65

更新时间： 2024-11-28 14:55:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	970K
描述
TO-220-3L

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CJP12N65 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L Plastic-Encapsulate MOSFETS

CJP12N65

N-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

TO-220-3L

650V

0.7Ω 10V

12A

GENERAL DESCRIPTION

This advanced high voltage MOSFET is designed to stand high

energy in the avalanche mode and switch efficiently. This new

high energy device also offers a drain-to-source diode fast

recovery time. Designed for high voltage, high speed switching

applications such as power supplies, converters, power motor

controls and bridge circuits.

1. GATE

2. DRAIN

3. SOURCE

FEATURE

High Current Rating

Lower R_DS(on)

Low Reverse Transfer Capacitance

Fast Switching Capability

Tighter V_SDSpecifications

Avalanche Energy Specified

MARKING

Equivalent Circuit

P12N65= Device code

Solid dot = Green molding compound device,

if none, the normal device

XXX=Code

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GSS

I_D

650

±30

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current(note1)

I_DM

Single Pulsed Avalanche Energy (note2)

Thermal Resistance from Junction to Ambient

Junction Temperature

E_AS

R_θJA

T_J

540

62.5

150

℃/W

Storage Temperature Range

Maximum lead temperature for soldering purposes ,

1/8”from case for 5 seconds

T_STG

-55 ~+150

℃

T_L

260

www.jscj-elec.com

Rev. - 1.1

12 3 4

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