Datasheet > CJLJF3117P

CJLJF3117P

更新时间： 2024-11-06 14:55:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	2618K
描述
DFNWB2x2-6L-A

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数据手册

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CJLJF3117P 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFNWB2X2-6L-A Power Management MOSFETS-Schottky

P-channel MOSFET and Schottky Barrier Diode

CJLJF3117P

I_D/I_O

-3.3A

V_(BR)DSS/VR

-20V

R_DS(on)MAX

DFNWB2×2-6L-A

mΩ@-4.5V

100

135 Ω@-2.5V

250mΩ@-1.8V

30V

FEATURE

APPLICATION

Independent Pinout to Each Device to

Ease Circuit Design

Optimized for Portable Applications Like Cell

Phones,Digital Cameras,Media Players,etc

DC-DC Buck Circuits

High Current

Schottky Diode

Li-ion Battery Applications

Color Display and Camera Flash Regulators

MARKING

Equivalent Circuit

Maximum ratings (T_a=25℃ unless otherwise noted)

Symbol Para

meter

Value

Unit

P-MOSFET

V_DS

V_GS

I_D

Drain-Source Voltage

-20

±8

Gate-Source Voltage

Continuous Drain Current

Pulse Drain Current

-3.3

-10

I_DM*

Schottky Barrier Diode

Peak Repetitive Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

V_RRM

V_R

I_O

Power Dissipation, Temperature and Thermal Resistance

P_D

R_θJA

T_j

Power Dissipation

0.75

83.3

℃/W

℃

Thermal Resistance from Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

-40~+125

-55~+150

260

T_stg

T_L

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

℃

*Repetitive rating：Pluse width limited by junction temperature.

www.jscj-elec.com

Rev. - 2.0

12 3 4 5 6

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