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CJL8810A PDF预览

CJL8810A

更新时间: 2024-11-25 14:53:43
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
7页 1948K
描述
SOT-23-6L

CJL8810A 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23-6L Plastic-Encapsulate MOSFETS  
CJL8810A  
Dual N-Channel MOSFET  
ID  
V(BR)DSS  
RDS(on)TYP  
SOT-23-6L  
Ω@4.5V  
12.8m  
13.0mΩ@3.8V  
@2  
20V  
7
A
.5V  
21.5mΩ@1.8V  
15.0mΩ  
DESCRIPTION  
The CJL8810A uses advanced trench technology to provide excellent  
RDS(ON) and low gate charge. It is ESD protected. This device is suitable  
for use as a uni-directional or bi-directional load switch,facilitated by its  
common-drain configuration.  
Equivalent Circuit  
MARKING  
L8810A=Device code  
Solid point=Pin1 positioning point  
XX=Date Code  
MAXIMUM RGS (Ta=25unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
VDS  
VGS  
ID  
20  
±12  
7
V
V
A
A
IDM  
PD  
*
30  
Power Dissipation  
1.25  
W
/W  
Thermal Resistance from Junction to Ambient  
Operation Junction and Storage Temperature Range  
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)  
RθJA  
100  
TJ,Tstg  
-55~+150  
260  
TL  
*Repetitive ratingPluse width limited by junction temperature.  
1
www.jscj-elec.com  
Rev. - 1.0  

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