Datasheet > CJL8810

CJL8810

更新时间： 2024-11-06 14:54:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	1499K
描述
SOT-23-6L

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数据手册

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CJL8810 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-6L Plastic-Encapsulate MOSFETS

CJL8810

Dual N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

SOT-23-6L

Ω@4.5V

14.5

15.6mΩ@3.8V

20V

.5V

18.5

mΩ

mΩ@1.8V

DESCRIPTION

The CJL8810 uses advanced trench technology to provide excellent

R_DS(ON)and low gate charge. It is ESD protected. This device is suitable

for use as a uni-directional or bi-directional load switch,facilitated by its

common-drain configuration.

Equivalent Circuit

MARKING:

L8810=Device code

Solid point=Pin1 positioning point

XX=Date Code

L8810

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_DS

V_GS

I_D

±12

I_DM

P_D

③

Power Dissipation

714

℃/W

℃

③

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

R_θJA

175

T_J,T_stg

-55~+150

260

T_L

℃

*Repetitive rating：Pluse width limited by junction temperature.

www.jscj-elec.com

Rev. - 2.2

12 3 4 5 6

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