Datasheet > CJL6602A

CJL6602A

更新时间： 2024-11-06 14:54:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
10页	5909K
描述
SOT-23-6L

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数据手册

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CJL6602A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-6L Plastic-Encapsulate MOSFETS

CJL6602A P-channel and N-channel Complementary MOSFETS

P-channel

SOT-23-6L

I_D

V_(BR)DSS

R_DS(on)MAX

mΩ@

-10V

-30V

-2.3A

Ω@-4.5V

N-channel

I_D

V_(BR)DSS

R_DS(on)MAX

79mΩ@

10V

30V

3.4A

118m

Ω@4.5V

GENERAL DESCRIPTION

The CJL6602A uses advanced trench technology to provide excellent RDS(on)

and low gate charge. The complementary MOSFETS form a high-speed

power inverter and suitable for a multitude of applications.

Equivalent Circuit

MARKING

L6602A=Device code

Solid point=Pin1 positioning point

XX=Date Code

Maximum Ratings (T_J=25℃ unless otherwise noted)

Value

Parameter

Symbol

Unit

N-channel

P-channel

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current⁽¹⁾

Pulsed Drain Current ⁽²⁾

V_DS

V_GS

I_D

-30

±12

3.4

±12

-2.3

-30

I_DM

P_D

Power Dissipation

Thermal Resistance from Junction to Ambient⁽¹⁾

0.83

150

0.83

150

℃/W

R_θJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

1.The value of R_θJAis measured with the device one-side active only, mounted on 1 in²FR-4 board with 2oz. single-sided Copper,

in a still air environment with TA =25°C.

2.Repetitive rating,pulse with limited by junction temperature.

www.jscj-elec.com

Rev. - 1.0

12 3 4 5 6 7...10

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