JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6602 P-channel and N-channel Complementary MOSFETS
P-channel
SOT-23-6L
ID
V(BR)DSS
RDS(on)MAX
mΩ@
-10V
135
m
185
Ω@-4.5V
-2.3A
-30V
265mΩ@-2.5V
N-channel
ID
V(BR)DSS
RDS(on)MAX
60mΩ@
75m
10V
3.4A
30V
Ω@4.5V
115mΩ@2.5V
GENERAL DESCRIPTION
The CJL6602 uses advanced trench technology to provide excellent RDS(on)
and low gate charge. The complementary MOSFETS form a high-speed
power inverter and suitable for a multitude of applications.
Equivalent Circuit
MARKING
L6602=Device code
Solid point=Pin1 positioning point
XX=Date Code
L6602
XX
Maximum Ratings (TA=25℃ unless otherwise noted)
Value
Parameter
Symbol
Unit
N-channel
P-channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
Pulsed Drain Current (2)
VDS
VGS
ID
30
-30
V
V
±12
3.4
±12
-2.3
-30
A
IDM
PD
30
A
Power Dissipation
Thermal Resistance from Junction to Ambient(1)
0.35
357
0.35
357
W
℃/W
RθJA
Operation Junction and
Storage Temperature Range
TJ,Tstg
-55~+150
-55~+150
℃
1.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The value in any given application depends on the user's specific board design.The current ratings is based on
t≤10s thermal rasistance rating.
2. Repetitive rating,pulse with limited by junction temperature.
www.jscj-elec.com
1
Rev. - 2.0