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CJL6602 PDF预览

CJL6602

更新时间: 2024-11-06 14:55:15
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
6页 5786K
描述
SOT-23-6L

CJL6602 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23-6L Plastic-Encapsulate MOSFETS  
CJL6602 P-channel and N-channel Complementary MOSFETS  
P-channel  
SOT-23-6L  
ID  
V(BR)DSS  
RDS(on)MAX  
mΩ@  
-10V  
135  
m
185  
Ω@-4.5V  
-2.3A  
-30V  
265mΩ@-2.5V  
N-channel  
ID  
V(BR)DSS  
RDS(on)MAX  
60mΩ@  
75m  
10V  
3.4A  
30V  
Ω@4.5V  
115mΩ@2.5V  
GENERAL DESCRIPTION  
The CJL6602 uses advanced trench technology to provide excellent RDS(on)  
and low gate charge. The complementary MOSFETS form a high-speed  
power inverter and suitable for a multitude of applications.  
Equivalent Circuit  
MARKING  
L6602=Device code  
Solid point=Pin1 positioning point  
XX=Date Code  
L6602  
XX  
Maximum Ratings (TA=25unless otherwise noted)  
Value  
Parameter  
Symbol  
Unit  
N-channel  
P-channel  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current(1)  
Pulsed Drain Current (2)  
VDS  
VGS  
ID  
30  
-30  
V
V
±12  
3.4  
±12  
-2.3  
-30  
A
IDM  
PD  
30  
A
Power Dissipation  
Thermal Resistance from Junction to Ambient(1)  
0.35  
357  
0.35  
357  
W
/W  
RθJA  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55~+150  
-55~+150  
1.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with  
TA =25°C. The value in any given application depends on the user's specific board design.The current ratings is based on  
t10s thermal rasistance rating.  
2. Repetitive rating,pulse with limited by junction temperature.  
www.jscj-elec.com  
1
Rev. - 2.0  

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