Datasheet > CJL02N10

CJL02N10

更新时间： 2024-11-27 14:53:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	748K
描述
SOT-23-6L

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数据手册

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CJL02N10 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-6L Plastic-Encapsulate MOSFETS

CJL02N10 N-Channel 100V(D-S) MOSFET

SOT-23-6L

I_D

V_(BR)DSS

R_DS(on)MAX

100V

100mΩ@

10V

General Description

The CJL02N10 uses advanced trench technology to provide

excellent R_DS(on)with low gate charge. This device is suitable for use

as a load switch or in PWM applications.

FEATURE

APPLICATION

Power switching application

Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

Equivalent Circuit

02N10=Device code

Solid point=Pin1 positioning point

XX=Date Code

02N10

Maximum ratings (T^a=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Value

Unit

V_DS

V_GS

I_D

100

±20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

P_D

Maximum Power Dissipation

℃/W

℃

0.8

156

Thermal Resistance from Junction to Ambient(t ≤5s)

Operation Junction and Storage Temperature Range T_J,T_stg

-55 ~+150

Rev. - 2.0

www.jscj-elec.com

12 3 4 5

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