JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK2333 P-channel MOSFET
ID
V(BR)DSS
RDS(on)MAX
28mΩ@-4.5V
32mΩ@-3.7V
40mΩ@-2.5V
63mΩ@-1.8V
150mΩ@-1.5V
SOT-23-3L
-6A
-12V
1. GATE
2. SOURCE
3. DRAIN
FEATURE
APPLICATION
TrenchFET Power MOSFET
DC/DC Converter
Excellent R
Low Gate Charge
DS(on) and
Load Switch for Portable Devices
Battery Switch
MARKING
Equivalent Circuit
S33
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
-12
±8
V
V
A
Continuous Drain Current
-6
Pulsed Drain Current (t=300µs)
IDM
-20
A
W
0.4
Pow
PD
er Dissipation
Thermal Resistance from Junction to Ambient
RθJA
312.5
-55~ +150
℃/W
℃
TJ,TSTG
Operation Junction and Storage Temperature Rangee
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1
Rev. - 2.1