Datasheet > CJF44HNPN

CJF44HNPN

更新时间： 2024-11-29 01:16:39

品牌	Logo	应用领域
CDIL		局域网
页数	文件大小	规格书
4页	223K
描述
SILICON PLANAR POWER TRANSISTORS

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数据手册

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CJF44HNPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR POWER TRANSISTORS

CJF44H11 NPN

CJF45H11 PNP

TO-220FP Fully Isolated

Plastic Package

pose Power Amplification and Switching such as Output or Driver Stages

General Pur

in Applications

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

V_CEO

Collector Emitter Voltage

Emitter Base Voltage

V_EBO

3500

1500

(1) V_ISOL(a)

V_RMS

RMS Isolation Voltage ( for 1sec,R.H.

<30%, T_A=25ºC )

(b)

I_C

Collector Current -Continuous

- Peak

1.67

P_D

Total Power Dissipation @ Tc=25ºC

Derate Above 25ºC

W/ºC

Total Power Dissipation @ Ta=25ºC

Derate Above 25ºC

0.016

- 55 to +150

W/ºC

ºC

T_j,T_stg

Operating and Storage Junction

Temperature Range

THERMAL RESISTANCE

From Junction to Ambient

From Junction to Case

R_{th (j-a)}

R_{th (j-c)}

62.5

3.5

ºC/W

(1) RMS Isolation Voltage : (a) 3500 V_RMSwith Package in Clip Mounting Position (b) 1500 V_RMSwith Package

in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

UNIT

V_{CEO (sus)}

I_C=30mA, I_B=0

V_CE=Rated V_CEO, V_BE=0

V_EB=5V, I_C=0

I_C=8A, I_B=0.4A

I_C=8A, I_B=0.8A

I_C=2A, V_CE=1V

I_C=4A, V_CE=1V

Collector Emitter sustaining Voltage

Collector Cut off Current

µA

CES

Emitter Cut off Current

EBO

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

DC Current Gain

1.85

1.5

CE(Sat)

BE(Sat)

h_FE

Continental Device India Limited

Data Sheet

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