Datasheet > CJF15030NPN

CJF15030NPN

更新时间： 2024-11-29 01:22:23

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SILICON PLANAR POWER TRANSISTORS

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CJF15030NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR POWER TRANSISTORS

CJF15030 NPN

CJF15031 PNP

TO-220FP Fully Isolated

Plastic Package

Designed for General Purpose Amplifier and Switching Applications.

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

V_CBO

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

150

V_CEO

150

V_EBO

(1) V_ISOL(a)

V_RMS

RMS Isolation Voltage ( for 1sec,R.H.

<30%, T_A=25ºC )

3500

(b)

1500

I_C

Collector Current - Continuous

Collector Current - Peak

Base Current

I_B

P_D**

Total Power Dissipation @ Tc=25ºC

Derate Above 25ºC

0.29

W/ºC

P_D

Total Power Dissipation @ Ta=25ºC

Derate Above 25ºC

0.016

- 65 to +150

W/ºC

ºC

T_j,T_stg

Operating and Storage Junction

Temperature Range

THERMAL RESISTANCE

From Junction to Ambient

From Junction to Case

R_{th (j-a)}

62.5

3.5

260

ºC/W

ºC

R_{th (j-c)**}

T_L

Lead Temperature for Soldering Purpose

**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location

beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.

(1) RMS Isolation Voltage : (a) 3500 V_RMSwith Package in Clip Mounting Position (b) 1500 V_RMSwith Package

in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

UNIT

V_{CEO (sus)}

I_C=10mA, I_B=0

V_CB=150V, I_E=0

V_CE=150V, I_B=0

V_EB=5V,I_C=0

Collector Emitter sustaining Voltage

Collector Cut off Current

150

I_CBO

µA

I_CEO

I_EBO

Emitter Cut off Current

Continental Device India Limited

Data Sheet

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