Datasheet > CJE3139K

CJE3139K

更新时间： 2024-11-26 14:53:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	594K
描述
SOT-523

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中文翻译

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数据手册

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CJE3139K 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate MOSFETS

CJE3139K P-Channel MOSFET

I_D

V_(BR)DSS

R_DS(on)MAX

SOT-523

mΩ@-4.5V

520

-20V

-0.66A

700 Ω@-2.5V

950mΩ(TYP)@-1.8V

1. GATE

2. SOURCE

3. DRAIN

FEATURE

Lead Free Product is Acquired

Surface Mount Package

P-Channel Switch with Low R_DS(on)

Operated at Low Logic Level Gate Drive

APPLICATION

Load/Power Switching

Interfacing, Logic Switching

Battery Management for Ultra Small

Portable Electronics

MARKING

Equivalent Circuit

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

V_DS

Value

-20

Unit

Typical Gate-Source Voltage

V_GS

I_D

±12

Continuous Drain Current (note 1)

Pulsed Drain Current (t_p=10μs)

Power Dissipation (note 1)

-0.66

-1.2

I_DM

P_D

150

℃/W

℃

Thermal Resistance from Junction to Ambient (note 1)

Operation Junction and Storage Temperature Range

R_θJA

T_J,T_STG

T_L

833

-55~+150

260

Lead Temperature for Soldering Purposes(1/8” from case for 10 s)

℃

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

中文翻译

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