Datasheet > CJDE8404

CJDE8404

更新时间： 2024-11-26 14:55:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2831K
描述
DFNWB3×3-8L-U

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中文翻译

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数据手册

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CJDE8404 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFNWB3×3-8L-U Plastic-Encapsulate MOSFETS

CJDE8404

N-Channel + P-Channel MOSFET

D FNWB3×3-8L-U

Product Summary

V_(BR)DSS

I_D

RDS(on)TYP

35mΩ@-10V

-4A

-30V

30V

53mΩ@-4.5V

25mΩ@10V

35mΩ@4.5V

Feature



Low drain-source ON-resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Application



Portable equipment

Motor drive

Equivalent Circuit

MARKING:

DE8404 = Part No.

Solid dot = Pin1 indicator.

XX = Code.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

P-MOSFET

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current⁽¹⁾

Pulsed Drain Current

Power Dissipation

V_DS

V_GS

I_D

-30

±20

-4

I_DM

P_D

-16

N-MOSFET

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

V_DS

V_GS

I_D

±20

I_DM

P_D

Temperature and Thermal Resistance

Thermal Resistance from Junction to Ambient⁽²⁾

Junction Temperature

R_θJA

T_J

150

℃/W

℃

Storage Temperature

T_STG

-55~ +150

℃

Rev. - 1.1

www.jscj-elec.com

12 3 4 5

中文翻译

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