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CJD47_10 PDF预览

CJD47_10

更新时间: 2024-11-25 09:25:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 420K
描述
SURFACE MOUNT NPN SILICON POWER TRANSISTOR

CJD47_10 数据手册

 浏览型号CJD47_10的Datasheet PDF文件第2页 
CJD47  
CJD50  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON  
POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CJD47, CJD50  
types are NPN Silicon Power Transistors manufactured  
in a surface mount package designed for high voltage  
applications such as power supplies and other  
switching applications.  
MARKING: FULL PART NUMBER  
DPAK TRANSISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
CJD47  
350  
CJD50  
500  
UNITS  
V
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
CBO  
CEO  
EBO  
250  
400  
V
5.0  
1.0  
V
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
2.0  
A
CM  
I
600  
15  
mA  
W
B
P
D
D
Power Dissipation (T =25°C)  
A
P
1.56  
W
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
8.33  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JC  
JA  
Thermal Resistance  
Θ
80.1  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
200  
200  
100  
100  
1.0  
UNITS  
µA  
µA  
µA  
µA  
mA  
V
I
I
I
I
I
V
V
V
V
V
=150V (CJD47)  
=300V (CJD50)  
=350V (CJD47)  
=500V (CJD50)  
=5.0V  
CEO  
CEO  
CES  
CES  
EBO  
CE  
CE  
CE  
CE  
EB  
BV  
I =30mA (CJD47)  
250  
400  
CEO  
CEO  
C
BV  
I =30mA (CJD50)  
V
C
V
V
I =1.0A, I =200mA  
1.0  
1.5  
150  
V
CE(SAT)  
BE(ON)  
FE  
C
B
V
=10V, I =1.0A  
V
CE  
CE  
CE  
CE  
CE  
C
h
h
V
V
V
V
=10V, I =300mA  
30  
10  
10  
25  
C
=10V, I =1.0A  
FE  
C
f
=10V, I =200mA, f=2.0MHz  
MHz  
T
C
h
=10V, I =200mA, f=1.0kHz  
fe  
C
R2 (4-January 2010)  

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