Datasheet > CJCD2003

CJCD2003

更新时间： 2024-11-22 14:54:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	4270K
描述
DFNWB2×3-6L

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数据手册

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CJCD2003 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFNWB2×3-6L Plastic-Encapsulate MOSFETS

DFNWB2×3-6L

CJCD2003

Dual N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

6.2

6.4

6.8

7.2

8.2

Ω@4.5V

Ω@4.0V

18V

12A

Ω 3.8V

mΩ

3.1

Ω@2.5V

DESCRIPTION

The CJCD2003 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch,facilitated

by its common-drain configuration.

Equivalent Circuit

MARKING:

G2 S2

D1/D2

G1 S1

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MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

V_GS

±12

①

Continuous Drain Current

Pulsed Drain Current

I_D

②

I_DM

①

Power Dissipation

P_D

℃/W

℃

⑤

Thermal Resistance from Junction to Ambient

62.5

R_θJA

Junction Temperature and Storage Temperature Range

-55 ~+150

T_JT_stg

www.jscj-elec.com

Rev. - 2.2

12 3 4 5 6

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