Datasheet > CJBM3020

CJBM3020

更新时间： 2024-11-19 14:49:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1411K
描述
DFNWB3×3-8L

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数据手册

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CJBM3020 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFNWB3×3-8L Plastic-Encapsulate MOSFETS

N-Channel Power MOSFET

CJBM3020

I_D

V_(BR)DSS

R_DS(on)TYP

DFNWB3×3-8L

@10V

8.8mΩ

S2 S2 S2 G2

30V

20A

S1/D2

15mΩ 4.5V

DESCRIPTION

D1 D1 D1 G1

The CJBM3020 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. It can be used in a

wide variety of applications

FEATURES



Battery switch



Excellent package for good heat dissipation

Special process technology for high ESD

capability

Load switch



High density cell design for ultra low R_DS(ON)

Fully characterized avalanche voltage and

current

APPLICATIONS



SMPS and general purpose applications

Hard switched and high frequency circuits



Uninterruptible Power Supply

MARKING

EQUIVALENT CIRCUIT

G2 S2 S2 S2

BM3020=Part No. Solid

dot=Pin1 indicator

XX=Code

BM3020

G1 D1 D1 D1

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

V_GS

±20

①

Continuous Drain Current

I_D

②

Pulsed Drain Current

I_DM

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

①

P_D

1.5

83.3

Thermal Resistance from Junction to Ambient

R_θJA

℃/W

-55~+150

T ,

℃

Operating Junction and

T_stg

Storage Temperature Range

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

中文翻译

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