Datasheet > CJBD3020

CJBD3020

更新时间： 2024-11-19 14:54:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		光电二极管
页数	文件大小	规格书
5页	2287K
描述
PDFNWB3.3×3.3-8L-B

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数据手册

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CJBD3020 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

PDFNWB3.3×3.3-8L-B Plastic-Encapsulate MOSFETS

N-Channel Power MOSFET

CJBD3020

I_D

V_(BR)DSS

R_DS(on)TYP

PDFNWB3.3×3.3-8L-B

@10V

9.5mΩ

30V

20A

14.5mΩ 4.5V

DESCRIPTION

The CJBD3020 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. It can be used in a

wide variety of applications

FEATURES



Battery switch



Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD

capability

Load switch

High density cell design for ultra low R_DS(ON)

Fully characterized avalanche voltage and

current

APPLICATIONS



SMPS and general purpose applications

Hard switched and high frequency circuits



Uninterruptible Power Supply

MARKING

EQUIVALENT CIRCUIT

D1 D1 D2 D2

D3020=Part No.

D3020

Solid dot=Pin1 indicator

XX=Date Code

S1 G1 S2 G2

MAXIMUM RATINGS ( T_J=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

V_GS

±20

①

Continuous Drain Current

I_D

②

Pulsed Drain Current

I_DM

100

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

①

P_D

⑤

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

Junction and Storage Temperature Range

R_θJA

83.3

5.0

℃/W

℃

①

R_θJC

_J,T_stg

-55 ~+150

Rev. - 1.3

www.jscj-elec.com

12 3 4 5

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