Datasheet > CJBB3134K

CJBB3134K

更新时间： 2024-11-19 14:54:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1752K
描述
DFN1006-3L-A

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数据手册

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CJBB3134K 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFN1006-3L-A Plastic-Encapsulate MOSFETs

CJBB3134K N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(on)MAX

DFN1006-3L-A

mΩ@

4.5V

500

700

900

20V

0.75A

mΩ@2.5V

mΩ@1.8V

FEATURE

APPLICATION

z Lead Free Product is Acquired

z Surface Mount Package

zLoad/ Power Switching

zInterfacing Switching

z N-Channel Switch with Low R_DS(on)

z Operated at Low Logic Level Gate Drive

z ESD Protected Gate

zBattery Management for Ultra Small

Portable Electronics

z Logic Level Shift

MARKING:

Equivalent Circuit

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

±12

Typical Gate-Source Voltage

Continuous Drain Current (note 1)

0.75

1.8

Pulsed Drain Current (tp=10us)

I_DM

Power Dissipation (note 1)

P_D

275

℃/W

℃

Thermal Resistance from Junction to Ambient (note 1)

Operation Junction and Storage Temperature Range

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

R_θJA

T_J,T_STG

T_L

455

-55~ 150

260

℃

Rev. - 2.3

www.jscj-elec.com

12 3 4 5

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