Datasheet > CJBA3139K

CJBA3139K

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1208K
描述
DFN1006-3L

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数据手册

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CJBA3139K 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFN1006-3L Plastic-Encapsulate MOSFETs

CJBA3139K P-Channel MOSFET

I_D

V_(BR)DSS

R_DS(on)MAX

DFN1006-3L

mΩ@-

4.5V

520

-20V

-0.66A

mΩ@-2.5V

780

950mΩ(TYP)@-1.8V

FEATURE

APPLICATION

z Lead Free Product is Acquired

z Surface Mount Package

zLoad/ Power Switching

zInterfacing Switching

z P-Channel Switch with Low R_DS(on)

z Operated at Low Logic Level Gate Drive

z ESD Protected Gate

zBattery Management for Ultra Small

Portable Electronics

z Logic Level Shift

MARKING:

Equivalent Circuit

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

-20

±12

Typical Gate-Source Voltage

Continuous Drain Current (note 1)

-0.66

-1.2

Pulsed Drain Current (tp=10us)

I_DM

Power Dissipation (note 1)

P_D

275

℃/W

℃

Thermal Resistance from Junction to Ambient (note 1)

Operation Junction and Storage Temperature Range

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

R_θJA

T_J,T_STG

T_L

455

-55~ 150

260

℃

Rev. - 2.4

www.jscj-elec.com

12 3 4 5

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