Datasheet > CHTA14ZPT

CHTA14ZPT

更新时间： 2024-02-23 19:53:27

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	154K
描述
NPN Epitaxial Transistor

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中文翻译

获取价格

数据手册

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CHTA14ZPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHTA14ZPT

SMALL FLAT

NPN Epitaxial Transistor

VOLTAGE 30 Volts CURRENT 1 Ampere

APPLICATION

* General purpose switching and amplification

* Audio power amplifier

FEATURE

* Small flat package. (SC-73/SOT-223)

SC-73/SOT-223

* Saturation voltage VCE(sat)=1.5V(max.)(I

* PD= 2.0W (Power Dissipation).

C/IB=100mA/0.1mA)

1.65+0.15

6.50+0.20

3.00+0.10

0.90+0.05

2.0+0.3

* High saturation current capability.

CONSTRUCTION

0.9+0.2

* NPN Switching Transistor

0.70+0.10

0.27+0.05

0.01~0.10

0.70+0.10

2.30+0.1

0.70+0.10

4.60+0.1

1 Base

2 Collector ( Heat Sink )

3 Emitter

CIRCUIT

Dimensions in millimeters

SC-73/SOT-223

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

Volts

Amps

Open Collector

C/W

Thermal resistance

junction - case point

TA ≤ 25^OC; Note 1

62.5

RθJ-C

Total Power Dissipation

Storage Temperature

PTOT

TSTG

2000

^oC

-55

+150

Junction Temperature

+150

^oC

Operating Ambient Temperature

TAMB

-55

Note

1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

2004-01

12 3

中文翻译

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