Datasheet > CHT8550PT

CHT8550PT

更新时间： 2024-09-26 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	244K
描述
EPITAXIAL Transistor

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中文翻译

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数据手册

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CHT8550PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT8550PT

SURFACE MOUNT

EPITAXIAL Transistor

VOLTAGE 20 Volts CURRENT 700 mAmpere

FEATURE

* Small surface mounting type. (SOT-23)

* High DC current .

SOT-23

CONSTRUCTION

(1)

(2)

* PNP transistors in one package.

(3)

MARKING

(

)

* C855

* D855

* E855

(

)

.055 1.40

.028 0.70

(

)

(

)

.047 1.20

.020 0.50

(

)

.103 2.64

.086 (2.20)

(

)

.045 1.15

(3)

CIRCUIT

(

)

.033 0.85

(1)

(2)

SOT-23

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBOcollector-base voltage open emitter

MIN.

MAX.

UNIT

−

-25

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

open base

-20

-5

open collector

-700

P_tot

T_amb≤ 25 °C; note 1

225

T_stg

T_j

storage temperature

−55

−

+150

150

°C

junction temperature

T_amb

operating ambient temperature

−55

+150

2008-01

Note

1. Transistor mounted on an FR4 printed-circuit board.

12 3

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