Datasheet > CHT847BVPT

CHT847BVPT

更新时间： 2024-09-26 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	216K
描述
NPN General Purpose Transistor

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CHT847BVPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT847BVPT

SURFACE MOUNT

NPN General Purpose Transistor

VOLTAGE 45 Volts CURRENT 0.1 Ampere

APPLICATION

* AF input stages and driver applicationon equipment.

* Other general purpose applications.

FEATURE

* Small surface mounting type. (SOT-563)

SOT-563

* High current gain.

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

(1)

(5)

0.50

1.5~1.7

0.50

0.9~1.1

CONSTRUCTION

(4)

(3)

0.15~0.3

* Two NPN transistors in one package.

1.1~1.3

MARKING

* V3

0.5~0.6

0.09~0.18

CIRCUIT

1.5~1.7

TR2

TR1

SOT-563

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBO

UNIT

collector-base voltage open emitter

V_CEO

collector-emitter voltage

open base

V_EBO

I_C

emitter-base voltage

collector current (DC)

open collector

0.1

150

P_C

Collector power dissipation

T_stg

T_j

storage temperature

junction temperature

°C

−55~+150

+150

Note

2004-07

1. Transistor mounted on an FR4 printed-circuit board.

12 3 4

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