Datasheet > CHT846BWPT

CHT846BWPT

更新时间： 2024-02-20 07:36:22

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	211K
描述
NPN General Purpose Transistor

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CHT846BWPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT846BWPT

SURFACE MOUNT

NPN General Purpose Transistor

VOLTAGE 65 Volts CURRENT 0.1 Ampere

APPLICATION

* AF input stages and driver applicationon equipment.

* Other general purpose applications.

FEATURE

* Surface mount package. (SC-70/SOT-323)

* High current gain.

SC-70/SOT-323

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

0.65

1.3±0.1

2.0±0.2

0.65

0.3±0.1

MARKING

1.25±0.1

* HFE(Q):RH

* HFE(R):RI

* HFE(S):RJ

0.8~1.1

0.05~0.2

0~0.1

0.1Min.

2.0~2.45

CIRCUIT

SC-70/SOT-323

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_CBO

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

UNIT

−

V_CEO

collector-emitter voltage

open base

−

V_EBO

I_C

emitter-base voltage

collector current (DC)

open collector

0.1

0.3

0.4

−

P_C

Collector power dissipation

Note2

T_stg

T_j

storage temperature

junction temperature

°C

−55

+150

150

−

Note

1. Transistor mounted on an FR4 printed-circuit board.

2. When mounted on a 7X5X0.6mm ceramic board.

2004-10

12 3 4

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