Datasheet > CHT55N1PT

CHT55N1PT

更新时间： 2024-02-14 01:54:17

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	64K
描述
PNP General Purpose Transistor

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CHT55N1PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT55N1PT

SURFACE MOUNT

PNP General Purpose Transistor -

VOLTAGE 60 Volts CURRENT 0.5 Ampere

APPLICATION

* General purpose applications.

FBPT-923

FEATURE

* Small surface mounting type. (FBPT-923)

* Low current (Max.=500mA).

0.5±0.05

1.0±0.05

* Suitable for high packing density.

* Low voltage (Max.=60V) .

0.37(REF.)

0.25(REF.)

* High saturation current capability.

1.0±0.05

CONSTRUCTION

0.05±0.04

* PNP General Purpose Transistor

0.68±0.05

0.42±0.05

0.3±0.05

(3)

CIRCUIT

(1)

0.26±0.05

E⁽²⁾

Dimensions in millimeters

FBPT-923

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_CBO

PARAMETER

collector-base voltage

CONDITIONS

MIN.

MAX.

-60

UNIT

open emitter

open base

−

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current DC

−

-60

open collector

−

-4

−

-500

-100

100

+150

150

+150

°C

I_CM

I_BM

peak collector current

peak base current

−

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

_amb≤ 25 °C; note 1

−

−55

−

°C

T_amb

−55

°C

Note

2006-07

1. Transistor mounted on an FR4 printed-circuit board.

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