Datasheet > CHT5564XPT

CHT5564XPT

更新时间： 2024-09-25 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	87K
描述
NPN Epitaxial Transistor

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中文翻译

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CHT5564XPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT5564XPT

SURFACE MOUNT

NPN Epitaxial Transistor

VOLTAGE 15 Volts CURRENT 6 Amperes

APPLICATION

* DC to DC relay drivers,lamp drivers

FEATURE

* Small flat package. (SC-62/SOT-89)

SC-62/SOT-89

* Low saturation voltage VCE(sat)=0.18V(IC/IB=1.5A/0.03A)

* PC= 1.3W (mounted on ceramic substrate).

* High saturation current capability.

4.6MAX.

1.7MAX.

1.6MAX.

0.4+0.05

CONSTRUCTION

* NPN Cilicon Transistor

+0.08

0.45-0.05

MARKING

+0.08

0.40-0.05

1.50+0.1

1 Base

2 Collector ( Heat Sink )

3 Emitter

CIRCUIT

Dimensions in millimeters

SC-62/SOT-89

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

Volts

Amps

Open Collector

Peak Collector Current

Peak Base Current

ICM

IBM

0.6

1.3

+150

Total Power Dissipation

Storage Temperature

Junction Temperature

Operating Ambient Temperature

TA ≤ 25^OC; Note 1

PTOT

TSTG

-55

^oC

TAMB

-55

^oC

2006-02

Note

1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

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