Datasheet > CHT5551WPT

CHT5551WPT

更新时间： 2024-02-07 15:15:28

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	93K
描述
NPN SILICON Transistor

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CHT5551WPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT5551WPT

SURFACE MOUNT

NPN SILICON Transistor

VOLTAGE 160 Volts CURRENT 0.2 Ampere

APPLICATION

* Telephony and proferssional communction equipment.

SC-70/SOT-323

FEATURE

* Small surface mounting type. (SC-70/SOT-323)

* Suitable for high packing density.

CONSTRUCTION

0.65

1.3±0.1

2.0±0.2

0.65

* NPN transistors in one package.

0.3±0.1

1.25±0.1

MARKING

* YW

0.8~1.1

0.05~0.2

0~0.1

0.1Min.

2.0~2.45

CIRCUIT

SC-70/SOT-323

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBOcollector-base voltage open emitter

MIN.

MAX.

180

UNIT

−

V_CEO

V_EBO

collector-emitter voltage

emitter-base voltage

open base

160

6.0

open collector

I_C

−

collector current (DC)

total power dissipation

200

0.3

P_tot

T_stg

−

T_amb≤ 25 °C; note 1

−65

+150

°C

storage temperature

T_j

junction temperature

−

150

°C

T_amb

operating ambient temperature

−65

+150

2004-11

Note

1. Transistor mounted on an FR4 printed-circuit board.

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