Datasheet > CHT5401ZPT

CHT5401ZPT

更新时间： 2024-02-06 01:24:59

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	137K
描述
PNP SILICON Transistor

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CHT5401ZPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT5401ZPT

SURFACE MOUNT

PNP SILICON Transistor

VOLTAGE 150 Volts CURRENT 0.5 Ampere

APPLICATION

* Telephony and proferssional communction equipment.

* Other switching applications.

SC-73/SOT-223

FEATURE

* Small flat package. ( SC-73/SOT-223 )

* Suitable for high packing density.

1.65+0.15

6.50+0.20

3.00+0.10

0.90+0.05

2.0+0.3

CONSTRUCTION

*PNP SILICON Transistor

0.9+0.2

MARKING

* ZFP

0.70+0.10

0.27+0.05

0.01~0.10

0.70+0.10

2.30+0.1

0.70+0.10

4.60+0.1

1 Base

2 Emitter

3 Collector ( Heat Sink )

(3)

CIRCUIT

(1)

E(2)

Dimensions in millimeters

SC-73/SOT-223

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_CBO

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

UNIT

−

-160

-150

-5.0

V_CEO

V_EBO

collector-emitter voltage

emitter-base voltage

open base

open collector

I_C

−

collector current (DC)

total power dissipation

-500

P_tot

T_stg

−

2.0

T_amb≤ 25 °C; note 1

−65

+150

°C

storage temperature

T_j

junction temperature

−

150

°C

T_amb

operating ambient temperature

−65

+150

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004-7

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