Datasheet > CHT4126WPT

CHT4126WPT

更新时间： 2024-01-12 19:25:50

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	139K
描述
General Purpose Transistor

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CHT4126WPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT4126WPT

SURFACE MOUNT

General Purpose Transistor

VOLTAGE 25 Volts CURRENT 200 mAmpere

APPLICATION

* AF input stages and driver applicationon equipment.

* Other general purpose applications.

FEATURE

* Small surface mounting type. (SC-70/SOT-323)

* High current gain.

SC-70/SOT-323

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

0.65

1.3±0.1

2.0±0.2

0.65

CONSTRUCTION

0.3±0.1

1.25±0.1

* PNP Silicon Transistor

MARKING

* DW

0.8~1.1

0.05~0.2

0~0.1

0.1Min.

⁽³⁾C

2.0~2.45

CIRCUIT

(1)

⁽²⁾E

SC-70/SOT-323

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBOcollector-base voltage open emitter

MIN.

MAX.

-25

UNIT

−

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

open base

-25

-4

open collector

-200

300

P_tot

T_amb≤ 25 °C; note 2

T_stg

T_j

storage temperature

−65

−

+150

150

°C

junction temperature

T_amb

operating ambient temperature

−65

+150

2004-8

Note

2. Transistor mounted on an FR4 printed-circuit board.

12 3 4

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