Datasheet > CHT2324PT

CHT2324PT

更新时间： 2024-11-07 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	190K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CHT2324PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT2324PT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 4.2 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SC-59/SOT-346

FEATURE

* Small flat package. (SC-59 )

* High density cell design for extremely low RDS(ON).

* Rugged and reliable.

(2)

* High saturation current capability.

(3)

0.95

2.7~3.1

0.95

(1)

1.7~2.1

CONSTRUCTION

0.3~0.51

* N-Channel Enhancement

1.2~1.9

0.89~1.3

0.085~0.2

0~0.1

0.3~0.6

(3)

CIRCUIT

2.1~2.95

(1)

SC-59/SOT-346

Dimensions in millimeters

(2)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHT2324PT

Units

V_DSS

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±12

Maximum Drain Current - Continuous

- Pulsed

4.2

I_D

(Note 3)

16.0

P_D

T_J

1250

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

°C

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

100

°C/W

2005-02

12 3

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