Datasheet > CHT2301PT

CHT2301PT

更新时间： 2024-09-17 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管场效应晶体管
页数	文件大小	规格书
3页	215K
描述
P-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CHT2301PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT2301PT

SURFACE MOUNT

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.3 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SC-59/SOT-346

FEATURE

* Small surface mounting type. (SC-59/SOT-346)

* High density cell design for low RDS(ON).

* Suitable for high packing density.

* Rugged and reliable.

(2)

(3)

0.95

2.7~3.1

0.95

(1)

1.7~2.1

* High saturation current capability.

* Voltage controlled small signal switch.

0.3~0.51

CONSTRUCTION

1.2~1.9

* P-Channel Enhancement

MARKING

* 01

0.89~1.3

0.085~0.2

0~0.1

0.3~0.6

CIRCUIT

2.1~2.95

Dimensions in millimeters

SC-59/SOT-346

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHT2301PT

Units

V_DSS

Drain-Source Voltage

-20

V_GSS

Gate-Source Voltage

±8

Maximum Drain Current - Continuous

- Pulsed

(Note 1)

(Note 2)

-2.3

-10

I_D

I_S

(Note 1)

-1.6

Drain-Source Diose Forward Current

P_D

(Note 1)

1250

°C

Maximum Power Dissipation

T_J

STG

Operating and Storage Temperature Range

-55 to 150

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

Thermal characteristics

θJA

Thermal Resistance, Junction-to-Ambient

°C/W

2005-12

12 3

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