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CHT170PT PDF预览

CHT170PT

更新时间: 2024-02-05 12:10:48
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 210K
描述
N-Channel Enhancement Mode Field Effect Transistor

CHT170PT 数据手册

 浏览型号CHT170PT的Datasheet PDF文件第2页浏览型号CHT170PT的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
CHT170PT  
SURFACE MOUNT  
N-Channel Enhancement Mode Field Effect Transistor  
VOLTAGE 60 Volts CURRENT 0.5 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
SC-59/SOT-346  
FEATURE  
* Small surface mounting type. (SC-59)  
* High density cell design for low RDS(ON).  
* Suitable for high packing density.  
* Rugged and reliable.  
(2)  
(3)  
0.95  
1.7~2.1  
2.7~3.1  
* High saturation current capability.  
* Voltage controlled small signal switch.  
0.95  
(1)  
0.3~0.51  
CONSTRUCTION  
1.2~1.9  
* N-Channel Enhancement  
MARKING  
* AT  
0.89~1.3  
0.085~0.2  
0~0.1  
0.3~0.6  
D
3
CIRCUIT  
2.1~2.95  
G
1
Dimensions in millimeters  
SC-59/SOT-346  
S 2  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Units  
Symbol  
Parameter  
CHT170PT  
VDSS  
Drain-Source Voltage  
60  
V
V
60  
VDGR  
VGSS  
Drain-Gate Voltage  
Gate-Source Voltage - Continuous  
±20  
V
- Non Repetitive (tp < 50µs)  
40  
±
ID  
Maximum Drain Current - Continuous  
- Pulsed  
500  
mA  
800  
PD  
Maximum Power Dissipation  
300  
mW  
°C  
TJ  
STG  
,T  
Operating and Storage Temperature Range  
-55 to 150  
Thermal characteristics  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
417  
K/W  
2004-4  

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