Datasheet > CHT127ZPT

CHT127ZPT

更新时间： 2024-02-12 16:22:09

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	142K
描述
PNP SILICON Transistor

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CHT127ZPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT127ZPT

SURFACE MOUNT

PNP SILICON Transistor

VOLTAGE 100 Volts CURRENT 5 Ampere

APPLICATION

* Telephony and proferssional communction equipment.

* Other switching applications.

SC-73/SOT-223

FEATURE

* Small flat package. ( SC-73/SOT-223 )

1.65+0.15

6.50+0.20

3.00+0.10

* Suitable for high packing density.

* High saturation current capability.

0.90+0.05

2.0+0.3

CONSTRUCTION

0.9+0.2

* PNP SILICON Transistor

0.70+0.10

0.27+0.05

0.01~0.10

0.70+0.10

2.30+0.1

0.70+0.10

4.60+0.1

MARKING

* ZBP

1 Base

2 Emitter

3 Collector ( Heat Sink )

(3)

CIRCUIT

(1)

E (2)

Dimensions in millimeters

SC-73/SOT-223

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_CBO

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

-100

UNIT

−

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current (DC)

open base

-100

-5.0

open collector

−

ICM

Peak Collector Current

-8.0

P_tot

total power dissipation

−

T_amb≤ 25 °C; note 1

T_stg

−65

+150

°C

storage temperature

T_j

junction temperature

−

150

°C

T_amb

operating ambient temperature

−65

+150

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004-7

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