Datasheet > CHT06UPNPT

CHT06UPNPT

更新时间： 2024-09-17 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
5页	93K
描述
NPN/PNP Silicon AF Transistor Array

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CHT06UPNPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHT06UPNPT

SURFACE MOUNT

NPN/PNP Silicon AF Transistor Array

VOLTAGE 80 Volts CURRENT 0.5 Ampere

APPLICATION

* AF input stages and driver applicationon equipment.

* Other switching applications.

FEATURE

* Small surface mounting type. (SC-74/SOT-457)

* High current gain.

SC-74/SOT-457

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Two internal isolated NPN/PNP transistor in

one package.

(1)

(3)

(6)

(4)

0.95

2.7~3.1

0.95

1.7~2.1

0.25~0.5

CONSTRUCTION

1.4~1.8

* NPN/PNP transistor in one package.

0.08~0.2

0.935~1.3

0~0.15

0.3~0.6

2.6~3.0

CIRCUIT

TR2

TR1

SC-74/SOT-457

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBOcollector-base voltage

MIN.

MAX.

UNIT

open emitter

open base

−

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

−

open collector

−

500

1000

200

330

+150

150

+150

°C

I_CM

I_BM

−

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C; note 1

−

−65

−

°C

T_amb

−65

°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2002-7

12 3 4 5

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