Datasheet > CHS5104-99F

CHS5104-99F

更新时间： 2024-09-24 01:20:39

品牌	Logo	应用领域
UMS		光电二极管
页数	文件大小	规格书
12页	494K
描述
DC-4GHz reflective SPDT

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中文翻译

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CHS5104-99F 数据手册

CHS5104-99F

DC-4GHz reflective SPDT

GaAs Monolithic Microwave IC

Description

The CHS5104-99F is a monolithic FET

based reflective switch.

It is designed for

wide range of

applications, from defense to commercial

communication systems.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

It is available in chip form.

Main Features

■ Broadband performance: DC-4GHz

■ Low insertion loss: 0.5dB@4GHz

■ Isolation:

38dB@2GHz

30dB@4GHz

■ Return loss: 20dB@2GHz

13dB@4GHz

■ Input P1dB: 30dBm

■ Chip size: 0.8x0.8x0.07mm³

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

On state insertion loss

Off state isolation

0.5

ISOL

On state return loss

IP1dB

Input Power @1dB gain compression

dBm

Ref. : DSCHS51043168 - 17 Jun 13

1/12

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

12 3 4 5 6 7...12

中文翻译

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